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스퍼터링 시스템

ATC FLAGSHIP SERIES SPUTTERING SYSTEMS

YEONJIN 2020-12-16 20:43:36 2079
AJA International사의 ATC Flagship Series 스퍼터링 시스템은 대부분의 요구사항을 충족하도록 다양한 구성으로 구축되는 다목적 PVD 코팅 장비입니다. 본 시스템은 AJA사의 독특한 A300-XP (UHV) 또는 Stiletto Series (HV) 마그네트론 스퍼터링 소스(magnetron sputtering source)를 중심으로 구축되어, 정밀하고 재현있는 공 초점의 직접적인 축외 박막 증착을 가능하게 하는 in-situ source head tilting 기능이 특징입니다. 모든 시스템에는 챔버 상단을 들어 올리는 헤비 듀티 호이스트를 포함하고 있습니다.

Systems are available in the following chambers sizes:
  • ATC 1800  (18"  Ø)
  • ATC 2200 (22" Ø)
  • ATC 2600 (26" Ø)

 


Substrate holders with heating or cooling from 25mm to 300mm Ø are available on these machines. AJA magnetron sputter sources from 1"-12" Ø, plus rectangular, triangular and turret sputter sources can be incorporated. The maximum number of sputter sources will depend on the substrate size, configuration and magnetron sputter source size. For example, the ATC 1800 can be fitted with (5) 2" magnetrons with in-situ tilt. Consult the factory for optimum configuration.  These versatile sputtering systems can be also fitted with other deposition sources (e-beam evaporation, thermal evaporation and PLD) , ion sources, facing target sputtering sources (FTS), contact masking systems, metal-sealed tops, bake jackets, glove boxes, cassettes, auto-loading and analytical tools (RHEED, XPS, Auger, RGA, Ellipsometers and MOS).

Labview based computer control and either turbomolecular or cryopumping are utilized depending on the application. ATC Flagship Systems can also be easily connected to each other or to ATC Orion Systems for multi-chamber (e.g. metal/oxide) or multi-technique (e.g. sputter/e-beam evaporation/thermal evaporation/PLD/ion milling/analytical) configurations.

 

TYPICAL FLAGSHIP SPUTTERING SYSTEM CONFIGURATIONS

ATC 1800 UHV - Standard Con-Focal

ATC 1800 UHV
(5) con-focal A320-XP 2" UHV sputter sources with in-situ tilt, (1) normal incidence A330-XP-3” UHV sputtering source for high rate applications, CTI-8 cryopump, 850°C rotating substrate heater with RF bias, computer control & load-lock for 100 mm Ø substrates.


ATC 2200 UHV - 9 Position Cassette Auto-Loading

ATC 2200 UHV
(6) A330-XP 3" UHV sputter sources with in-situ tilt, 1200 l/s turbopump, 800°C, rotating substrate heater with RF bias, computer control and automated (9) substrate cassette elevator in the load-lock for 150 mm Ø substrates.


 

ATC 2200 UHV - Combinatorial Chemistry Configuration

ATC 2200 UHV
(6) A330-XP (3" target) in-situ tilt, sputter sources are employed to deposit a circular array of discrete, combinatorial dots onto wafers or 156 mm square glass substrates. The same system can also be used to deposit continuous gradients from up to six directions simultaneously.
Refraction of SiO2 film showing gradient deposition
Circular Array of Discrete Combinatorial Dots on wafer and glass square substrates

 


 

 

 

 

 

 

ATC 2200 UHV - 10 to 13 Source GMR/MTJ Research System

ATC 2200 UHV 
(11) Source GMR/MTJ research system with auto-loading and 6 position cassette.
 
11 Source GMR/MTJ Research System
(8) A320-XP 2" sources and (3) A315-XP 1.5" sources
for GMR/MTJ research
13 Source GMR/MTJ Research System
(2) A320-XP 2" sources for MM targets and up
to (11) A315-XP 1.5" sources for GMR/MTJ films

 


 

 

 

 

 

 

 

ATC 2200 HV - Direct Sputter High Rate Turret Coater

ATC 2200 HV 
High rate direct sputter Turret Coater for 4" wafers.  Wafers can be flipped in-situ and coated on both sides.  Turret incorporates (4) STX-150 (6") magnetron sources and a 1000 W RF power supply/matchbox with integral, automatic, (4) way switchbox.
STX-150-4 Axial Turret 
compatible with 1000 W RF
STX-150-4T Axial Turret 
with gas ring and removable shield

 


 

 

 

 

 

 

 

ATC 2600 UHV - Direct Sputter 12 Source Coating Tool

ATC 2600 UHV
(12) Source direct sputter coater for (8) 1" samples.  Sample positioning is stepper motor controlled and programmable.


TYPICAL RATE / UNIFORMITY DATA

The ATC Series Thin Film Deposition Systems can be configured for con-focal, direct, and off-axis deposition. Con-focal deposition with in-situ tilt sputter sources (AJA pioneered and developed this concept in 1991) can deliver uniformity of better than ± 2% on substrates twice the diameter of the targets. Often ± 1% or better is achievable. A typical deposition profile with SiO2 on a 6" diameter Si wafer is shown.

Deposition rate is a function of sputter yield of the material, maximum allowable power density into the target (depends on heat transfer capability of target material), and type of power used (e.g. RF, DC, pulsed DC).

Maximum deposition rates are achieved with materials such as Au - high sputter yield, excellent heat transfer material and can be sputtered with DC (most efficient). Slow deposition rates can be expected with materials such as Al2O3 - very low sputter yield, poor heat transfer material and must be sputtered with RF (1/2 the efficiency of DC). Typical rates are 0-18 Å/sec with Au, 0-9 Å/sec with Cu and 0-0.16 Å/sec with Al2O3 in a confocal configuration with 2" sources on a 100 mm diameter substrate. Off-axis deposition rates are typically 1-5 times lower than con-focal deposition rates depending on substrate size and system configuration.

Direct deposition at short working distances (50-100 mm) can achieve rates as high as 300 Å/sec but con-focal geometry results in much better uniformity, the ability to co-deposit alloy films and the ability to grow better ultra-thin film multilayers since the substrate is always "in the plasma." The cost of the smaller targets employed in con-focal configurations can also significantly reduce operating cost. The ultimate system configuration offered will always depend on the application.

A330-XP UHV Magnetron Sputter Source 
 In-situ tilt in con-focal orientation for uniform 
 deposition onto 150 mm Ø substrate.
SiO2 film thickness measurements over 
a 150 mm diameter Si wafer coated in a 
standard  ATC 2200. This particular ATC 
2200 was configured with (6) 3" A330-XP 
UHV magnetron sputter sources featuring
in-situ tilt. This film was deposited by a 
single 3" source in a single run and achieves 
± 1.17% uniformity over 140mm diameter.


 

 

 

 

 

 

 

 

 

SPUTTERING SOURCES

(6) A320-XP UHV Magnetron Sputter Sources 
 In-situ tilt in a con-focal orientation for uniform  deposition
onto 100 mm Ø.


AJA's exclusive Stiletto (HV) and A300 (UHV) Series Magnetron Sputtering Sources are designed for maximum application flexibility. These unique sources feature a modular magnet array which can be configured by the customer to operate in the balanced, unbalanced (Type II) and magnetic material modes. Gas injection chimneys and shutter systems are incorporated to facilitate in-situ tilting and prevent cross-contamination and target poisoning. 3" and 4" sources can be operated at pressures below 4 x 10-4Torr in combination with an ion source to perform IBAD at half the price and complexity of an ion beam assisted ion beam sputtering system.

 

 

 

The Unique AJA Modular Magnet Array & In-situ Tilting Features

 

The A300XP series and Stiletto Series feature a unique “modular magnet array” which is completely isolated from the cooling water to eliminate magnet deterioration and subsequent degradation of source performance. This design permits access to the internal magnet arrangement thus allowing the same source to be:

  • Adjusted for highly uniform or intentionally non-uniform depositions
  • Operated as a balanced magnetron
  • Configured for maximum target utilization
  • Configured for high or low rate sputtering 
  • Configured for high or low electron energies as they arrive at the substrate surface
  • Operated in a variety of unbalanced magnetron configurations
  • Operated with magnetic material targets and facilitating easy magnet target removal and replacement


 For angled sputtering configurations with rotating substrates, AJA International Inc. sputtering sources can be fitted with the “in-situ tilt” option. This option, shown at the left, allows the source angle to be precisely adjusted from outside the vacuum chamber. Fine tuning the incident angle is critical to achieving good deposition uniformity when working distances, operating pressures and materials are changed. When fixed angle arrangements limit and often compromise the capabilities of a system, “in-situ tilt” can deliver better than ± 2% uniformity on substrates which can be up to triple the diameter of the source targets.

 

 

SUBSTRATE HOLDERS - HEATING / COOLING

The ATC Series Thin Film Deposition Systems are available with either motorized, rotating, substrate holders (for con-focal configurations) or "T" arm substrate holders (for direct deposition). AJA's experienced design and manufacturing team also offers custom substrate holders to satisfy unique requirements. SHQ and SiC Series substrate heaters can achieve temperatures of up to 1000°C and can be fitted with reactive gas  injection rings, substrate RF/DC bias capability for pre-cleaning and ion assisted deposition, in-situ manual or motorized Z motion for working distance adjustment and load-lock transfer, transverse magnetic field with in-situ orientation adjustment between layers and in-situ mask exchange (available with certain configurations). Indexing for "T" arms and for gradient depositions on rotating holders is accomplished with precise stepper motor systems. Electronic triggers for analytical applications are also available. 

AJA manufactures its own PID based temperature controllers and joystick actuated motor controllers for rotation and Z motion. AJA SHQ Series substrate heaters utilize cost effective, durable, fast cycling, quartz halogen lamp technology while the highest temperatures are achieved with Silicon Carbide elements. 

Custom cooled substrate carriers (water/LN2) are also available depending on the requirement.

8 Position Substrate Holder 
 Custom, stepper motor driven, indexable, for 50
 mm Ø substrates. This component is compatible 
 with load-locks and both manual and automated
 loading systems.
1.5 Liter LN2 Reservoir 
Attachments for 100mm Ø transfer plate.
This cooled holder features rotation, motorized Z-motion,
and a castellated transfer plate to 
eliminate the protrusion of mounting clips.


 

 

 SiC Series 100C Substrate Heater 
 Rotation, RF/DC bias capability, and motorized 
 Z- motion for 100 mm Ø substrates.

 

SHQ Series Quartz Lamp Heater
800°C for 150mm Ø substrates featuring motorized Z-motion,
rotation and a swing-in QCM for rate calibration.

 

 T Arm SHQ/H2O/RFB
 Double ended T arm substrate carrier.  One side 
 has 1000°C heating with RF biasing, the other side  
incorporates water cooled heat sinking to cool  down
substrates before exposure to air. 


 

 

 

 

 

 

 

 

 

 

 

SHQ Series Quartz Lamp Heater
1000°C for 1.5" Ø substrates featuring transferable
substrate carrier and gas injection frame.

 

 

 

 

 

 

 

 

 

PHASE II-J COMPUTER CONTROL

The AJA Labview based Phase II-J Computer Control System is used on all ATC Flagship Series Sputtering Systems. This straightforward, user friendly control system utilizes a large screen laptop in a 19” rack drawer connected to a single 4U rack mount hardware module. The back panel of the hardware module is populated with connectors to interface to all aspects of the sputtering system and to allow for easy future "plug and play" upgrades/expansions.

The Phase II-J control system allows the user to operate in either the “manual mode” or the “automated processing mode”. In the “automated processing mode” the user designs "process layers” which are then compiled and saved as a “process” to be executed with a single command. The system allows up to 104 unique user entry points which are accessible only by password, limiting access to a user’s process layers and thereby preventing unexpected corruption of a user’s saved processes. Data-logging to a Microsoft Excel spreadsheet is standard and is available with an adjustable refresh period. Remote preparation of new processes in a spreadsheet emulator format is available as an option. 

The standard Phase II-J control system will accommodate up to (5) DC power supplies, (4) RF power supplies, (1) 4-way DC switch-box, (1) 4-way RF switch-box, (4) process gases, (16) Valves/shutters, closed loop automatic pressure control, substrate rotation and substrate temperature control. Processes are aborted if plasma is not detected. Special “soak layers” can be easily incorporated into the process.

Labview Computer Control
 Large screen laptop on convenient slide drawer 
 for Labview based  ATC system computer control.  
Replacement laptops are always in stock. 
Computer Control Module Phase IIJ PLC
Compact 4U rack mount case.  This module is fitted
from the outset with all receptacles
for quick field retrofits/upgrades.

 


 

 

 

 

 

 

 

SYSTEM OPTIONS

HV and UHV Magnetron Sputter Sources with 
 In-Situ Tilt
Turbo pumped Load-lock with 9 position  
Cassette and Auto-loading


 

Turbomolecular and Cryogenic Vacuum Pumps
RF, DC, Pulsed DC and HIPIMS Power Supplies


 

Bake-out Jackets
Easy Access,Tip-In, Utility Boxes for  
Pneumatics Cooling/Flow Sensors and for 
 Non- Hazardous Gases


 

Load-Locks with In-Situ Contact Mask Exchange
Mini Hazardous Gas Box for H2S  with N2 purge,  
gas detector and double walled feed to chamber


 

 Labview based Computer Control on convenient  
slide drawer
 Power Distribution Modules for 208V and 
 380V systems


 

Sputtering Targets
Automatic Closed-Loop, Downstream  
  Pressure Control with alternate Position Mode 
  for Upstream Control


 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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