Silicon Carbide Sputtering Target
Description
Silicon is a chemical element that originated from the Latin ‘silex’ or ‘silicis’, meaning flint. It was first mentioned in 1824 and observed by J. Berzelius. The isolation was later accomplished and announced by J. Berzelius. “Si” is the canonical chemical symbol of silicon. Its atomic number in the periodic table of elements is 14 with a location at Period 3 and Group 14, belonging to the p-block. The relative atomic mass of silicon is 28.0855(3) Dalton, the number in the brackets indicating the uncertainty.
Carbon is a chemical element that originated from the Latin ‘carbo’, meaning charcoal. It was early used in 3750 BC and discovered by Egyptians and Sumerians. “C” is the canonical chemical symbol of carbon. Its atomic number in the periodic table of elements is 6 with a location at Period 2 and Group 14, belonging to the p-block. The relative atomic mass of carbon is 12.0107(8) Dalton, the number in the brackets indicating the uncertainty.
Silicon Carbide Sputtering Target Specification
|
Material Type |
Silicon Carbide |
|
Symbol |
SiC |
|
Melting Point (°C) |
~2,700 |
|
Theoretical Density (g/cc) |
3.22 |
|
Sputter |
RF |
|
Type of Bond |
Indium, Elastomer |
|
Comments |
Sputtering preferred. |
Silicon Carbide Sputtering Target Packaging
Our Silicon Carbide Sputtering Target is clearly tagged and labeled externally to ensure efficient identification and quality control. Great care is taken to avoid any damage which might be caused during storage or transportation.