MBE, Molecular Beam Epitaxy
OCTOPLUS 300 / 400 / 500 / 500 EBV / 600 / 600 EBV / OCTOPLUS-O 400, Thin Film System (OCTOPLUS 500 for PVD Application), Organic Deposition System
Dr. Eberl MBE-Komponenten사는 MBE와 표면 과학 및 다양한 UHV 응용 분야를 위한 박막 증착 장비를 제조 공급하며, 제품군으로 evaporation source, effusion cell, electron beam evaporator, sublimation source, 가스 소스 및 고객의 요구에 맞는 다양한 장비를 갖추고 있습니다. Dr. Eberl MBE-Komponenten은 약 30년 동안 전 세계 2000여 이상의 고객에게 2000가지 이상의 effusion cell과 다양한 종류의 evaporation source, MBE 시스템을 공급했습니다.
당사 (주)연진에스텍은 Dr. Eberl MBE-Komponenten의 MBE 시스템과 소스를 판매, 서비스합니다.










Molecular Beam Epitaxy, MBE OCTOPLUS Systems
|
300 |
400 |
500 |
500 EBV |
600 |
600 EBV |
O-400 |
Thin Film System |
Applications |
Semiconductors, Metals, Oxides, Organics | III-V, II-VI or other materials | III-V, II-VI or other materials | SiGe, Metals, Oxides | III-V, II-VI or other materials | Si/SiGe(Sn) epitaxial growth | Growth of oxides and metals | CIGS, Kesterite or CdTe deposition |
Size of chamber |
300 mm ID
|
450 mm ID
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550 mm ID
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550 mm ID
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600 mm ID
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600 mm ID
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450 mm ID
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550 mm ID
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Base pressure |
< 5x10-11 mbar
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< 5x10-11 mbar
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< 5x10-11 mbar
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< 5x10-11 mbar
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< 5x10-11 mbar
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< 5x10-11 mbar
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< 5x10-11 mbar
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< 5x10-11 mbar
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Pumping |
Turbopump,
Ion Getter Pump and TSP
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Cryopump, Turbopump,
Ion Getter Pump and TSP
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Cryopump, Turbopump,
Ion Getter Pump and TSP
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Cryopump, Turbopump,
Ion Getter Pump and TSP
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Cryopump, Turbopump,
Ion Getter Pump and TSP
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Cryopump, Turbopump,
Ion Getter Pump and TSP
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Cryopump, Turbopump,
Ion Getter Pump and TSP
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Cryopump, Turbopump,
Ion Getter Pump and TSP
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Substrate heater temperature |
Up to 1200°C
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Up to 1400°C
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Up to 1400°C
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Up to 1400°C
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Up to 1200°C
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Up to 1200°C
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Up to 1400°C
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Up to 1400°C
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Substrate size |
Up to
2“ wafers
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Up to
3“ diameter
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Up to
4“ diameter
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Up to
4“ diameter
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4”, 6” or
Multi-wafer 3x2”
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6”, 8”
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2”
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6” or
100x100mm
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Source ports |
9p (OD 2.75“) or
8p (OD 4.5“)
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10p (OD 4.5“)
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12p
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8p plus
2 e-beam
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12p
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10p
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10p
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12p
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Source types |
Effusion cells,
E-beam evaporators,
Sublimation,
Valved cracker,
Gas sources
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Effusion cells,
E-beam evaporators,
Sublimation,
Valved cracker,
Gas sources
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Effusion cells,
E-beam evaporators,
Sublimation,
Valved cracker,
Gas sources
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Effusion cells,
E-beam evaporators,
Sublimation,
Valved cracker,
Gas sources
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Effusion cells,
E-beam evaporators,
Sublimation,
Valved cracker,
Gas sources
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Effusion cells,
E-beam evaporators,
Sublimation,
Valved cracker,
Gas sources
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Effusion cells,
E-beam evaporators,
Sublimation,
Valved cracker,
Gas sources
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Effusion cells,
E-beam evaporators,
Sublimation,
Valved cracker,
Gas sources
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In-situ monitoring |
Ion Gauge, QCM, Pyrometer, RHEED, QMA
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Ion Gauge, QCM, Pyrometer, RHEED, QMA
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Ion Gauge, QCM, Pyrometer, RHEED, QMA
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Ion Gauge, QCM, Pyrometer, RHEED, QMA
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Ion Gauge, QCM, Pyrometer, RHEED, QMA
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Ion Gauge, QCM, Pyrometer, RHEED, QMA
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Ion Gauge, QCM, Pyrometer, RHEED, QMA
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Ion Gauge, QCM, Pyrometer, RHEED, QMA
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Sample transfer |
Manual
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Manual or
semi-automatic
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Manual or
semi-automatic
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Manual or
semi-automatic
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Automated transfer
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Automated transfer
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Manual or
semi-automatic
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Manual or
semi-automatic
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Load lock |
6 substrates
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6 substrates
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6 substrates
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8 substrates
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10 substrates
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10 substrates
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6 substrates
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5~10 substrates
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Selection guide by Element
1 | 18 | ||||||||||||||||
H | 2 | 13 | 14 | 15 | 16 | 17 | He | ||||||||||
Li | Be | B | C | N | O | F | Ne | ||||||||||
Na | Mg | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | Al | Si | P | S | Cl | Ar |
K | Ca | Sc | Ti | V | Cr | Mn | Fe | Co | Ni | Cu | Zn | Ga | Ge | As | Se | Br | Kr |
Rb | Sr | Y | Zr | Nb | Mo | Tc | Ru | Rh | Pd | Ag | Cd | In | Sn | Sb | Te | I | Xe |
Cs | Ba | * | Hf | Ta | W | Re | Os | Ir | Pt | Au | Hg | Tl | Pb | Bi | Po | At | Rn |
Fr | Ra | ** | Rf | Db | Sg | Bh | Hs | Mt | Ds | Rg | Cn | Uut | Fl | Uup | Lv | Uus | Uuo |
*Lanthanides | La | Ce | Pr | Nd | Pm | Sm | Eu | Gd | Tb | Dy | Ho | Er | Tm | Yb | Lu | ||
**Actinides | Ac | Th | Pa | U | Np | Pu | Am | Cm | Bk | Cf | Es | Fm | Md | No | Lr |
(see IUPAC Periodic Table of Elements)
MBE Components
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Substrate Manipulation
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Effusion Cells
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Source Clusters
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Doping Cells
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Valved Sources
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E-Beam Evaporators
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Organic Evaporators
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Gas Sources
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Shutter Accessories
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Equipment
Thin Film / CIGS / CZTS / CdTe
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Industrial Sources
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R&D System for Thin Film CIGS, CZTS or CdTe Solar Cell Systems
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R&D Sources
APPLICATION
Our MBE systems and components are used in the preparation of compound semiconductor devices such as HBTs, MESFETs, HEMTs as well as photo detectors and GaAs based laser diodes.
Large capacity sources are available for Cu, Ga, In, NaF and Se evaporation in large scale production of thin film solar cells. We create turn-key R&D systems and components for the growth of CIGS, CZTS and CdTe solar cell layers.
Our products are frequently employed for the preparation of nano structures like self-assembling dots, nano wires and for general small sample preparation.
Our MBE systems enable the preparation of quantum materials. Atomic layer precise deposition of metals, semiconductors and superconductors allow the fabrication of qubits, which may become essential for future quantum computers.
2D materials consist of a single layer of atoms or molecules. Examples are Graphene, Silicene, Borophene Phosphorene Tungsten and Molybdenum diselenide. The layers are prepared by 2D van der Waals heterostructures.
Our MBE systems and components make it possible to prepare solid state devices to study spin-dependent electron transport phenomena and giant magneto-resistance effects. Magnetic tunnel junctions can be prepared with our Octoplus MBE systems.
Our MBE systems make it possible to grow high quality topological insulators of different material types, e.g. HgTe, Bi2Se3 Bi2Te3, Sb2Te3, as well as Heusler alloys, oxides, and many others.
Electron beam evaporation as well as oxygen resistant thermal evaporation sources and heaters are used for vacuum deposition of oxide and nitride layers.
We manufacture organic material deposition systems and components for the preparation of OLED organic solar cells and other organic thin films.
Applications in this category are, for example, Au or Ag deposition for semiconductor device contacts and formation of Al contact layers for OLEDs. Numerous other metals are deposited by using our e-beam evaporators and high temperature sources.
Simulation

General Information
Introduction to our Monte Carlo Beam Flux Simulation
Simulation of the material evaporation and deposition in vacuum is usually based on the fundamental physical laws for the evaporation geometry (1/r2-Law) and Lambert’s Law, which explain the angular flux distribution from and to a surface element. These allow the application of different concepts to calculate the beam distribution of evaporation sources and therefore the deposition of material on a substrate.

R&D / MBE Systems
Monte Carlo simulation of thin film deposition in R&D type physical vapor deposition and MBE systems
Cross-section of an MBE system. Multiple radially arranged effusion sources are used to deposit materials onto a rotating substrate.
Calculated 2D flux distribution (Right)

Figure 2: Combined flux distribution on the substrate by two symmetrically aligned effusion cells.
Flat Panel Systems
Monte Carlo simulation of thin film deposition for industrial continuously running-through flat panel coating systems
Monte Carlo simulation allows to calculate the flux distribution of various types of evaporation sources. It provides information on the resulting flow rate distribution, material composition on the substrate, and material efficiency, thus allowing to optimize source design, source arrangement and depositon system layout.
An example for large area industrial flat panel deposition is illustrated schematically in the figure above. A pair of point sources (left part) or alternatively a linear evaporator (right part) is applied for the material evaporation. The source material or, in a co-deposition process, various source materials are deposited onto continuously running-through flat panels.

Roll-to-Roll Systems
Simulation of the evaporation from three pairs of point sources like for example Cu, Ga and In in a moving roll-to-roll process
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Why MC-Simulation?
It provides important information while saving time and money
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MC-Simulation allows the optimization of
- source design
- source arrangement
- deposition chamber layout
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It provides information about
- layer uniformity
- material efficiency
- layer composition -
For single material deposition and co-evaporation